Hall and thermoelectric evaluation of p-type InAs
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Abstract
This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hall and thermoelectric evaluation of p-type InAs</title><author><name sortKey="Wagener, M C" uniqKey="Wagener M">M. C. Wagener</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth</wicri:noRegion></affiliation></author><author><name sortKey="Wagener, V" uniqKey="Wagener V">V. Wagener</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth</wicri:noRegion></affiliation></author><author><name sortKey="Botha, J R" uniqKey="Botha J">J. R. Botha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0069887</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0069887 INIST</idno><idno type="RBID">Pascal:10-0069887</idno><idno type="wicri:Area/Main/Corpus">004A62</idno><idno type="wicri:Area/Main/Repository">005332</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Doping</term><term>Hall effect</term><term>Indium arsenides</term><term>Narrow band gap semiconductors</term><term>Seebeck effect</term><term>Temperature effects</term><term>Thermoelectric effect</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Effet Hall</term><term>Effet Seebeck</term><term>Centre accepteur</term><term>Dopage</term><term>Effet thermoélectrique</term><term>Arséniure d'indium</term><term>Semiconducteur bande interdite étroite</term><term>Couche mince</term><term>InAs</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>404</s2></fA05><fA06><s2>23-24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hall and thermoelectric evaluation of p-type InAs</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25</s1></fA09><fA11 i1="01" i2="1"><s1>WAGENER (M. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>WAGENER (V.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOTHA (J. R.)</s1></fA11><fA12 i1="01" i2="1"><s1>BAGRAEV (Nikolay T.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>EMTSEV (Vadim V.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ESTREICHER (Stefan K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University</s1><s2>Port Elizabeth</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Ioffe Institute</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Texas Tech University</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>5038-5041</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000171516491480</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0069887</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet température</s0><s5>04</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Temperature effects</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet Hall</s0><s5>05</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Hall effect</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet Seebeck</s0><s5>06</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Seebeck effect</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Acceptor center</s0><s5>07</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Dopage</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Effet thermoélectrique</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thermoelectric effect</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Efecto termoeléctrico</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur bande interdite étroite</s0><s5>16</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Narrow band gap semiconductors</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche mince</s0><s5>17</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thin films</s0><s5>17</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>046</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Defects in Semiconductors (ICDS)</s1><s2>25</s2><s3>Saint Petersburg RUS</s3><s4>2009-07-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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